Din păcate acest articol este disponibil doar în Engleză Americană. For the sake of viewer convenience, the content is shown below in the alternative language. You may click the link to switch the active language. The technique is demonstrated for a diamond device, with nitrogen–vacancy centers acting as local electric-field probes, subject to bias voltages Citește mai mult despre(English) Researchers develop a method for sensing the electric field generated in semiconductor devices during operation[…]