Researchers develop a method for sensing the electric field generated in semiconductor devices during operation

The technique is demonstrated for a diamond device, with nitrogen–vacancy centers acting as local electric-field probes, subject to bias voltages up to 150 volt. Semiconductors lie at the heart of many of the electronic devices that govern our daily lives. The proper functioning of semiconductor devices relies on their internally generated electric fields. Being able Read more about Researchers develop a method for sensing the electric field generated in semiconductor devices during operation[…]

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