Pioneer Technique to Grow Monolayer Tungsten Disulfide for Next-Generation Transistors, Wearable Electronics, and Biomedical Devices
Researchers at the NYU Tandon School of Engineering have pioneered a method for growing an atomic scale electronic material at the highest quality ever reported. In a paper published in Applied Physics Letters, Assistant Professor of Electrical and Computer Engineering Davood Shahrjerdi and doctoral student Abdullah Alharbi detail a technique for synthesizing large sheets of Read more about Pioneer Technique to Grow Monolayer Tungsten Disulfide for Next-Generation Transistors, Wearable Electronics, and Biomedical Devices[…]