(English) Pioneer Technique to Grow Monolayer Tungsten Disulfide for Next-Generation Transistors, Wearable Electronics, and Biomedical Devices

Din păcate acest articol este disponibil doar în Engleză Americană. For the sake of viewer convenience, the content is shown below in the alternative language. You may click the link to switch the active language. Researchers at the NYU Tandon School of Engineering have pioneered a method for growing an atomic scale electronic material at Citește mai mult despre(English) Pioneer Technique to Grow Monolayer Tungsten Disulfide for Next-Generation Transistors, Wearable Electronics, and Biomedical Devices[…]